Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs

نویسندگان

  • Xiangyu Dong
  • Yuan Xie
چکیده

Many new types of non-volatile memory technologies are now evolving. For example, emerging non-volatile memories such as STTRAM, PCRAM, and ReRAM show their attractive properties of high access performance and low access energy. In this work, we aim to facilitate these emerging non-volatile memory technologies in designing future high-performance and low-power computer systems. We start this work by building circuit-level performance, energy, and area models for STTRAM, PCRAM, and ReRAM. And then, we provide architecture-level techniques that mitigate the drawbacks in non-volatile memory write operations. Finally, we study the application-level cases of adopting these emerging technologies.

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تاریخ انتشار 2011